SSG4940N 8.3 a, 40 v, r ds(on) 22 m ? dual-n enhancement mode power mosfet elektronische bauelemente 10-jan-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell densit y trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as comput ers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current 1 i d @ t a = 25c 8.3 a i d @ t a = 70c 6.8 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 2.3 a total power dissipation 1 p d @ t a = 25c 2.1 w p d @ t a = 70c 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum junction to ambient a t Q 10 sec r ja 62.5 c / w steady-state 110 c / w notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sop-8 ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. g s g s d d d d
SSG4940N 8.3 a, 40 v, r ds(on) 22 m ? dual-n enhancement mode power mosfet elektronische bauelemente 10-jan-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static drain-source breakdown voltage v (br)dss 30 - - v v gs = 0v, i d = 250 a gate-threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds = 24v, v gs = 0v - - 25 a v ds = 24v, v gs = 0v, t j = 55c on-state drain current 1 i d(on) 20 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 22 m ? v gs = 10v, i d = 8.3a - - 27 v gs = 4.5v, i d = 7.3a forward transconductance 1 g fs - 40 - s v ds = 15v, i d = 8.3a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v pulsed source current(bodydiode) 1 i sm - 5 - a dynamic 2 total gate charge q g - 20 - nc i d = 10a v ds = 15v v gs = 5v gate-source charge q gs - 7.0 - gate-drain charge q gd - 7.0 - input capacitance c iss - 1317 - pf n-channel v ds =15v,v gs =0v, f=1mhz output capacitance c oss - 272 - turn-on delay time t d(on) - 20 - ns v dd = 25v i d = 1a v gen = 10v r l = 25 ? rise time t r - 9 - turn-off delay time t d(off) - 70 - fall time t f - 20 - notes 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
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